Origin of the bias stress instability in single-crystal organic field-effect transistors
نویسندگان
چکیده
B. Lee,1 A. Wan,2 D. Mastrogiovanni,2 J. E. Anthony,3 E. Garfunkel,2,4 and V. Podzorov1,4,* 1Department of Physics, Rutgers University, Piscataway, New Jersey 08854, USA 2Department of Chemistry, Rutgers University, Piscataway, New Jersey 08854, USA 3Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506, USA 4Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854, USA Received 23 May 2010; published 3 August 2010
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